Chemically prepared well-ordered InP(001) surfaces
Identifieur interne : 000327 ( Russie/Analysis ); précédent : 000326; suivant : 000328Chemically prepared well-ordered InP(001) surfaces
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Abstract
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InClx and phosphorus. Annealing at 230 °C induces desorption of InClx overlayer and reveals a P-rich (2 × 1) surface. Subsequent annealing at higher temperature induces In-rich (2 x 4) surface. The structural properties of chemically prepared InP(001) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Chemically prepared well-ordered InP(001) surfaces</title><author><name sortKey="Tereshchenko, O E" uniqKey="Tereshchenko O">O. E. Tereshchenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Novosibirsk State University, Lavrentiev Avenue 13</s1><s2>630090 Novosibirsk</s2><s3>RUS</s3><sZ>1 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>630090 Novosibirsk</wicri:noRegion></affiliation></author><author><name sortKey="Paget, D" uniqKey="Paget D">D. Paget</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique</s1><s2>91128 Palaiseau</s2><s3>FRA</s3><sZ>2 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Palaiseau</settlement></placeName></affiliation></author><author><name sortKey="Chiaradia, P" uniqKey="Chiaradia P">P. Chiaradia</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Dipartimento di Fisica and CNISM, Università di Roma Tor Vergata</s1><s2>00133 Roma</s2><s3>ITA</s3><sZ>3 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Rome</settlement><region nuts="2">Latium</region></placeName></affiliation></author><author><name sortKey="Placidi, E" uniqKey="Placidi E">E. Placidi</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>CNR - Istituto Nazionale di Fisica della Materia Via della Ricerca Scientifica 1</s1><s2>00133 Roma</s2><s3>ITA</s3><sZ>4 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Rome</settlement><region nuts="2">Latium</region></placeName></affiliation></author><author><name sortKey="Bonnet, J E" uniqKey="Bonnet J">J. E. Bonnet</name><affiliation wicri:level="4"><inist:fA14 i1="05"><s1>LURE, Université Paris-Sud</s1><s2>91405 Orsay</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName><orgName type="university">Université Paris-Sud</orgName></affiliation></author><author><name sortKey="Wiame, F" uniqKey="Wiame F">F. Wiame</name><affiliation wicri:level="3"><inist:fA14 i1="06"><s1>Laboratoire de Physico-Chimie des Surfaces, Ecole Nationale Supérieure de Chimie de Paris</s1><s2>75231 Paris</s2><s3>FRA</s3><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Paris</settlement></placeName></affiliation></author><author><name sortKey="Taleb Ibrahimi, A" uniqKey="Taleb Ibrahimi A">A. Taleb-Ibrahimi</name><affiliation wicri:level="4"><inist:fA14 i1="05"><s1>LURE, Université Paris-Sud</s1><s2>91405 Orsay</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName><orgName type="university">Université Paris-Sud</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0502783</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 06-0502783 INIST</idno><idno type="RBID">Pascal:06-0502783</idno><idno type="wicri:Area/Main/Corpus">008639</idno><idno type="wicri:Area/Main/Repository">008F74</idno><idno type="wicri:Area/Russie/Extraction">000327</idno></publicationStmt><seriesStmt><idno type="ISSN">0039-6028</idno><title level="j" type="abbreviated">Surf. sci.</title><title level="j" type="main">Surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anisotropy</term><term>Indium phosphides</term><term>Inorganic compounds</term><term>LEED</term><term>Passivation</term><term>Photoemission</term><term>Reflection spectrum</term><term>Semiconductor materials</term><term>Soft X radiation</term><term>Surface structure</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Structure surface</term><term>Passivation</term><term>LEED</term><term>Rayon X mou</term><term>Photoémission</term><term>Spectre réflexion</term><term>Anisotropie</term><term>Indium phosphure</term><term>Semiconducteur</term><term>In P</term><term>InP</term><term>Composé minéral</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InCl<sub>x</sub> and phosphorus. Annealing at 230 °C induces desorption of InCl<sub>x</sub> overlayer and reveals a P-rich (2 × 1) surface. Subsequent annealing at higher temperature induces In-rich (2 x 4) surface. The structural properties of chemically prepared InP(001) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0039-6028</s0></fA01><fA02 i1="01"><s0>SUSCAS</s0></fA02><fA03 i2="1"><s0>Surf. sci.</s0></fA03><fA05><s2>600</s2></fA05><fA06><s2>16</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Chemically prepared well-ordered InP(001) surfaces</s1></fA08><fA11 i1="01" i2="1"><s1>TERESHCHENKO (O. E.)</s1></fA11><fA11 i1="02" i2="1"><s1>PAGET (D.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHIARADIA (P.)</s1></fA11><fA11 i1="04" i2="1"><s1>PLACIDI (E.)</s1></fA11><fA11 i1="05" i2="1"><s1>BONNET (J. E.)</s1></fA11><fA11 i1="06" i2="1"><s1>WIAME (F.)</s1></fA11><fA11 i1="07" i2="1"><s1>TALEB-IBRAHIMI (A.)</s1></fA11><fA14 i1="01"><s1>Institute of Semiconductor Physics, Novosibirsk State University, Lavrentiev Avenue 13</s1><s2>630090 Novosibirsk</s2><s3>RUS</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique</s1><s2>91128 Palaiseau</s2><s3>FRA</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Dipartimento di Fisica and CNISM, Università di Roma Tor Vergata</s1><s2>00133 Roma</s2><s3>ITA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>CNR - Istituto Nazionale di Fisica della Materia Via della Ricerca Scientifica 1</s1><s2>00133 Roma</s2><s3>ITA</s3><sZ>4 aut.</sZ></fA14><fA14 i1="05"><s1>LURE, Université Paris-Sud</s1><s2>91405 Orsay</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="06"><s1>Laboratoire de Physico-Chimie des Surfaces, Ecole Nationale Supérieure de Chimie de Paris</s1><s2>75231 Paris</s2><s3>FRA</s3><sZ>6 aut.</sZ></fA14><fA20><s1>3160-3166</s1></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12426</s2><s5>354000133558630120</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>47 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0502783</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InCl<sub>x</sub> and phosphorus. Annealing at 230 °C induces desorption of InCl<sub>x</sub> overlayer and reveals a P-rich (2 × 1) surface. Subsequent annealing at higher temperature induces In-rich (2 x 4) surface. The structural properties of chemically prepared InP(001) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Structure surface</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Surface structure</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Passivation</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Passivation</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>LEED</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>LEED</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Rayon X mou</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Soft X radiation</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Photoémission</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Photoemission</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Spectre réflexion</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Reflection spectrum</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Espectro reflexión</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Anisotropie</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Anisotropy</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>16</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>16</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>In P</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>33</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Composé minéral</s0><s5>62</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>62</s5></fC03><fN21><s1>324</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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